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| B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES * UL Recognition, file number E54214 * Ideal for automated placement * High surge current capability * Solder Dip 260 C, 40 seconds ~ ~ ~ * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for SMPS, Lighting Ballaster, Adapter, Battery Charger, Home Appliances, Office Equipment, and Telecommunication applications. MECHANICAL DATA Case: DFM Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked on body ~ Case Style DFM MAJOR RATINGS AND CHARACTERISTICS IF(AV) VRRM IFSM IR VF Tj max. 0.9 A 65 V to 600 V 45 A 10 A 1.0 V 125 C MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS input voltage R + C-load Maximum average forward output current for free air operation at TA = 45 C Maximum DC blocking voltage Maximum peak working voltage Maximum non-repetitive peak voltage Maximum repetitive peak forward surge current Peak forward surge current single sine wave on rated load Rating for fusing at Tj = 125 C (t < 100 ms) Minimum series resistor C-load at VRMS = 10 % Maximum load capacitance Operating junction temperature range Storage temperature range + 50 % - 10 % R + L-load C-load SYMBOL VRRM VRMS IF(AV) VDC VRWM VRSM IFRM IFSM I2t RT CL TJ TSTG 1.0 5000 2.0 2500 65 90 100 125 180 200 B40 C800DM 65 40 B80 C800DM 125 80 B125 C800DM 200 125 0.9 0.8 200 300 350 10 45 10 4.0 1000 - 40 to + 125 - 40 to + 150 8.0 500 12 200 400 600 650 600 900 1000 B250 C800DM 400 250 B380 C800DM 600 380 UNIT V V A V V V A A A2sec F C C Document Number 88533 09-Oct-06 www.vishay.com 1 B40C800DM thru B380C800DM Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum reverse current at rated repetitive peak voltage per diode TEST CONDITIONS at 0.9 A SYMBOL VF IR B40 C800DM B80 C800DM B125 C800DM 1.0 10 B250 C800DM B380 C800DM UNIT V A THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads SYMBOL RJA RJL B40 C800DM B80 C800DM B125 C800DM 40 15 B250 C800DM B380 C800DM UNIT C/W ORDERING INFORMATION PREFERRED P/N B38C800DM-E3/45 UNIT WEIGHT (g) 0.416 PREFERRED PACKAGE CODE 45 BASE QUANTITY 50 DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.0 1.0 Average Forward Output Current (A) 0.8 Capacitive Load 0.6 Average Forward Output Current (A) 50 to 60 Hz Resistive or Inductive Load 50 to 60 Hz Resistive or Inductive Load 0.8 Capacitive Load 0.6 0.4 0 - 10 F 10 - 100 F > 100 F 0 - 10 F 10 - 100 F > 100 F 0.4 Mounted on P.C.B. with 0.06" (1.5 mm) Lead Length Copper Pads 0.51 x 0.51" (13 x 13 mm) 0 20 40 60 80 100 120 140 0.2 Mounted on P.C.B. with 0.06" (1.5 mm) Lead Length Copper Pads 0.51 x 0.51" (13 x 13 mm) 0 20 40 60 80 100 120 140 0.2 0 0 Ambient Temperature (C) Ambient Temperature (C) Figure 1. Derating Curves Output Rectified Current for B40C800D...B125C800DM Figure 2. Derating Curves Output Rectified Current for B250C800D...B360C800DM www.vishay.com 2 Document Number 88533 09-Oct-06 B40C800DM thru B380C800DM Vishay General Semiconductor 50 1.0 Cycle 40 Tj = 125 C 10 ms Single Sine-Wave 10 Instantaneous Reverse Current (A) Peak Forward Surge Current (A) Tj = 100 C 1 30 20 0.1 Tj = 25 C 10 0 0 10 100 0.01 0 20 40 60 80 100 Number of Cycles at 50 Hz Percent of Rated Peak Reverse Voltage (%) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge Current (A) 10 Tj = 25 C Pulse Width = 300 s 1 % Duty Cycle 1 Figure 5. Typical Reverse Leakage Characteristics Per Diode 100 Tj = 25 C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) 1.0 1.2 1.4 10 0.1 0.01 0.4 1 0.6 0.8 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFM 0.255 (6.5) 0.315 (8.00) 0.245 (6.2) 0.285 (7.24) 0.335 (8.51) 0.320 (8.12) 0.130 (3.3) 0.120 (3.05) 0.045 (1.14) 0.035 (0.89) 0.023 (0.58) 0.018 (0.46) 0.205 (5.2) 0.195 (5.0) 0.080 (2.03) 0.050 (1.27) 0.185 (4.69) 0.150 (3.81) 0.075 (1.90) 0.055 (1.39) 0.013 (3.3) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6) Document Number 88533 09-Oct-06 www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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